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  • STF13NM60N

STF13NM60N

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Manufacturer No:

STF13NM60N

Manufacturer:

STMicroelectronics

Feilidi NO:

761-STF13NM60N

Package:

TO-220-3 Full Pack

Datasheet:

STF13NM60N

ECAD Model:

Description:

STF13NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi

Quantity:

In Stock : 1349

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Product Details

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Product Description:

The STF13NM60N is a high-performance N-channel power MOSFET designed to provide efficient switching and robust power handling capabilities in various electronic applications. With its advanced features and reliable performance, this MOSFET is a versatile component for designing energy-efficient and power-dense circuits.


Features:


High Current Capability: The STF13NM60N MOSFET offers a high current handling capacity, making it suitable for applications that require significant power delivery.


Low On-Resistance: This MOSFET features low on-resistance, minimizing power losses and ensuring efficient power conversion during switching operations.


Fast Switching Speed: The STF13NM60N has a fast switching speed, allowing for quick transitions between on and off states, which is crucial for applications requiring rapid response times.


Enhanced Power Efficiency: With its low on-resistance and fast switching, the MOSFET contributes to higher power efficiency, reducing heat dissipation and overall power consumption.


Robust Design: Designed to withstand high voltage and current conditions, the STF13NM60N provides reliability and longevity in demanding environments.


Avalanche Energy Rating: The MOSFET has a high avalanche energy rating, indicating its ability to handle energy spikes without failing.


TO-220 Package: Housed in a TO-220 package, the MOSFET is easy to mount on circuit boards and provides effective thermal dissipation.


Applications:


Switching Power Supplies: The STF13NM60N is commonly used in switching power supply circuits to efficiently regulate and convert voltage levels.


Motor Control: It can be used in motor control circuits for applications like industrial machinery, robotics, and automotive systems.


Electronic Ballasts: The MOSFET is employed in electronic ballast circuits for fluorescent lamps, where efficient power conversion and control are crucial.


LED Lighting: LED drivers benefit from the STF13NM60N's power efficiency and fast switching capabilities, ensuring reliable and stable illumination.


Voltage Regulators: In voltage regulator circuits, the MOSFET aids in efficient voltage regulation and stabilization.


Audio Amplifiers: The MOSFET can be part of audio amplifier designs, ensuring reliable power delivery to speakers.


Battery Charging: Battery charging circuits, particularly those involving high power levels, can benefit from the MOSFET's efficiency and current handling capabilities.


Uninterruptible Power Supplies (UPS): The STF13NM60N can be integrated into UPS systems to manage power distribution and backup functions.


In summary, the STF13NM60N N-channel power MOSFET offers high current handling, low on-resistance, and fast switching speed, making it an ideal choice for a wide range of applications that demand efficient power handling and control. From motor control and power supplies to lighting and audio amplification, this MOSFET enhances energy efficiency and performance in various electronic circuits, contributing to the overall reliability and effectiveness of the systems it's integrated into.






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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STF13NM60N

technical specifications, attributes, parameters and parts with similar specifications to STF13NM60N.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    16 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 8 months ago)

  • Mount

    Through Hole

  • Packaging

    Tube

  • Series

    MDmesh™ II

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Length

    10.4mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Radiation Hardening

    No

  • Number of Pins

    3

  • Package / Case

    TO-220-3 Full Pack

  • REACH SVHC

    No SVHC

  • Height

    20mm

  • Width

    4.6mm

  • Resistance

    280mOhm

  • Mounting Type

    Through Hole

  • Operating Temperature

    -55°C~150°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • Manufacturer Package Identifier

    TO-220FP-7012510

  • JESD-609 Code

    e3

  • Terminal Finish

    Matte Tin (Sn) - annealed

  • Base Part Number

    STF13

  • Pin Count

    3

  • Number of Channels

    1

  • Subcategory

    FET General Purpose Power

  • Number of Elements

    1

  • JEDEC-95 Code

    TO-220AB

  • Case Connection

    ISOLATED

  • Element Configuration

    Single

  • Power Dissipation

    25W

  • Turn On Delay Time

    3 ns

  • Power Dissipation-Max

    25W Tc

  • Continuous Drain Current (ID)

    5.5A

  • Max Junction Temperature (Tj)

    150°C

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    30 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    360m Ω @ 5.5A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    790pF @ 50V

  • Gate Charge (Qg) (Max) @ Vgs

    30nC @ 10V

  • Rise Time

    8ns

  • Fall Time (Typ)

    10 ns

  • Gate to Source Voltage (Vgs)

    25V

  • Drain to Source Breakdown Voltage

    600V

  • Nominal Vgs

    3 V

  • Current - Continuous Drain (Id) @ 25°C

    11A Tc

  • Pulsed Drain Current-Max (IDM)

    44A

  • Avalanche Energy Rating (Eas)

    200 mJ

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±25V

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